TRANSISTOR FGPF50N33 T0220 IGBT 330V 50A

Product no.: TR28-CP376

Still in stock
can be shipped within 3 days

£4.50
Price before VAT, plus Delivery


  • TRANSISTOR IGBT
  • FAIRCHILD
  • 330V
  • 50A
  • T0220P ENCAPSULATED
  • USED IN PDP APPLICATIONS
  • USED IN LJ92-01601A
  • USED IN LJ41-05905A
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.6V @ I
C
= 50A
• High input impedance
• Fast switching
 
tm
©2009 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF50N33BT Rev. A
FGPF50N33BT 330V, 50A PDP Trench IGBT
April 2009
Absolute Maximum Ratings
Thermal Characteristics
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj
Symbol Description Ratings Units
V
CES
Collector to Emitter Voltage 330 V
V
GES
Gate to Emitter Voltage
±
 
30 V
I
C
Collector Current
@ T
C
= 25
o
C
50 A
I
Cpulse (1)*
Pulsed Collector Current
@ T
C
= 25
o
C
120 A
I
Cpulse (2)*
Pulsed Collector Current
@ T
C
= 25
o
C
160 A
P
D
Maximum Power Dissipation @ T
C
= 25
o
C43 W
Maximum Power Dissipation @ T
C
= 100
o
C 17.2 W
T
J
Operating Junction Temperature -55 to +150
o
C
T
stg
Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C

 

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