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Category | Trench MOSFET | |
Channel Mode | Enhancement | |
Channel Type | N | |
Configuration | Quad Drain, Triple Source | |
Dimensions | 4.9 x 3.9 x 1.575mm | |
Height | 1.575mm | |
Length | 4.9mm | |
Maximum Continuous Drain Current | 18.5 A | |
Maximum Drain Source Resistance | 6.6 mΩ | |
Maximum Drain Source Voltage | 30 V | |
Maximum Gate Source Voltage | ±20 V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 2.5 W | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Number of Elements per Chip | 1 | |
Package Type | SO-8 | |
Pin Count | 8 | |
Typical Gate Charge @ Vgs | 28 nC @ V@ 0 → 5, 55 nC @ V@ 0 → 10 | |
Typical Input Capacitance @ Vds | 3115 pF @ V@ 15 | |
Typical Turn-Off Delay Time | 39 ns | |
Typical Turn-On Delay Time | 13 ns | |
Width | 3.9mm |